Numerical analysis for systems with memory arising from semiconductor simulations

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摘要

Simulation of Amorphous Silicon microelectronic devices gives rise to a system of coupled non-linear partial differential equations with memory terms. In this paper we discuss semidiscrete finite element approximation schemes employed for the numerical discretization of such systems. Existence, uniqueness and error analysis are presented.

论文关键词:Amorphous silicon,Drift-diffusion,Finite element,Error estimates

论文评审过程:Available online 18 August 1999.

论文官网地址:https://doi.org/10.1016/S0096-3003(98)10081-4