A silicon basis for synaptic plasticity

摘要

This paper describes analogue VLSI synaptic circuitry incorporating two forms of plasticity: a nonassociative mechanism analogous to paired-pulse facilitation (PPF), and an associative form of adaptation analogous to the short-term potentiation (STP) variety of plasticity. Simulation results demonstrate expected temporal characteristics of the plasticity mechanisms. The time-course of decay of associative potentiation is established by utilising diode leakage current.