Analytical evaluation of the thermionic emission probability for semiconductor–insulator interfaces using incomplete gamma functions

摘要

In this study, a new efficient method for calculation of the charge carrier emission probability over energy barriers in semiconductor devices is presented. As will be seen, the present formulation yields compact closed-form expressions which enable the ready calculation of electron emission function. The results are amenable for use in further theoretical studies of thermionic emission probability for semiconductor–insulator interfaces where analytical methods may be desirable. Finally, the numerical results are presented and compared with results using alternative evaluation schemes.