Curved domain walls in the ferromagnetic nanostructures with Rashba and nonlinear dissipative effects
作者：
Highlights：
• DW velocity exhibits a jump at the threshold in the presence of current-driven motion.
• The threshold value of the external stimulus remains independent of the non-linear viscous damping coefficient.
• Walker-breakdown velocity is field-independent and current-dependent for the metallic and semiconductor FMs.
• The Rashba field significantly influences the DW motion and results in the enlargement of the steady-state dynamic regime.
• Observed larger sensitivity of the Walker breakdown field/current for the semiconductor FMs compared to the metallic ones.
摘要
•DW velocity exhibits a jump at the threshold in the presence of current-driven motion.•The threshold value of the external stimulus remains independent of the non-linear viscous damping coefficient.•Walker-breakdown velocity is field-independent and current-dependent for the metallic and semiconductor FMs.•The Rashba field significantly influences the DW motion and results in the enlargement of the steady-state dynamic regime.•Observed larger sensitivity of the Walker breakdown field/current for the semiconductor FMs compared to the metallic ones.
论文关键词：Curved domain walls,Nonlinear dry and viscous dissipation,Spin-transfer torque,Reductive perturbation technique,Micromagnetism
论文评审过程：Received 24 May 2021, Revised 10 December 2021, Accepted 20 December 2021, Available online 31 December 2021, Version of Record 31 December 2021.
论文官网地址：https://doi.org/10.1016/j.amc.2021.126894
