Mixed-hybrid finite elements for the simulation of thermal oxidation in semiconductors
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摘要
In this paper, we present and analyze a dual-mixed hybrid formulation capable of treating in a unified framework both compressible and incompressible problems in continuum mechanics. The potentialities of this approach are exploited in the computation of the stress field required in the simulation of the thermal oxidation process in semiconductor device technology.
论文关键词：Dual-mixed finite elements,Hybrid finite elements,Thermal oxidation process,Semiconductor technology,Compressible and incompressible fluid mechanical problems
论文评审过程：Received 24 September 2002, Revised 8 July 2003, Available online 12 March 2004.
论文官网地址：https://doi.org/10.1016/j.cam.2003.07.004
