Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications
作者：
Highlights：
• Mathematical approach for nanometric thickness optimisation of an HBT SiGeC base.
• Numerical modelling using simulator “SIBIDIF” based on the drift–diffusion model.
• Optimisation of performance of SiGeC HBT for thicknesses of 100 and 30 nm.
• However, for thicknesses less than 25 nm the model reaches these limits.
• Simulation results compared with characteristics obtained by measurements.
摘要
•Mathematical approach for nanometric thickness optimisation of an HBT SiGeC base.•Numerical modelling using simulator “SIBIDIF” based on the drift–diffusion model.•Optimisation of performance of SiGeC HBT for thicknesses of 100 and 30 nm.•However, for thicknesses less than 25 nm the model reaches these limits.•Simulation results compared with characteristics obtained by measurements.
论文关键词：Numerical modelling,DDM model,SiGe(C),HBT,Nanometric,Thickness base
论文评审过程：Received 11 February 2013, Revised 24 September 2013, Available online 15 October 2013.
论文官网地址：https://doi.org/10.1016/j.cam.2013.09.076
